XNRUSEMI XR3P10L

XNRUSEMI · FETs & Power MOSFETs · MPN XR3P10L

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Specifications

Gate Charge(Qg)19.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
RDS(on)367mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 P-Channel
Input Capacitance(Ciss)1.228nF
TypeP-Channel

Technical details

P-Channel 100V 3A 40W Surface Mount SOT-23-3L

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