XNRUSEMI XR3D02M

XNRUSEMI · FETs & Power MOSFETs · MPN XR3D02M

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Specifications

Gate Charge(Qg)2.2nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
RDS(on)125mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number2 P-Channel
Input Capacitance(Ciss)185pF
TypeP-Channel

Technical details

P-Channel 20V 3A 0.8W Surface Mount DFN2020-6L

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