XNRUSEMI XR3325M

XNRUSEMI · FETs & Power MOSFETs · MPN XR3325M

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)25.2nC@10V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation8W
Reverse Transfer Capacitance (Crss@Vds)225.4pF
RDS(on)5.8mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.827nF

Technical details

N-Channel Array 20V 25A 8W Surface Mount DFN2030-8L

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