XNRUSEMI XR30P10F

XNRUSEMI · FETs & Power MOSFETs · MPN XR30P10F

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Specifications

Gate Charge(Qg)115nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)151pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation119W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)38mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5nF
TypeP-Channel

Technical details

100V 30A 1.6V 119W 38mΩ@10V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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