XNRUSEMI XR30P10

XNRUSEMI · FETs & Power MOSFETs · MPN XR30P10

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Specifications

Gate Charge(Qg)147nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation107W
RDS(on)46mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 P-Channel
Input Capacitance(Ciss)8.056nF
TypeP-Channel

Technical details

P-Channel 100V 30A 107W Surface Mount TO-252-3L

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