XNRUSEMI XR30P04D

XNRUSEMI · FETs & Power MOSFETs · MPN XR30P04D

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Specifications

Gate Charge(Qg)28nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.05nF

Technical details

P-Channel 40V 30A 21W Surface Mount PDFN3333-8L

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