XNRUSEMI XR30N10B

XNRUSEMI · FETs & Power MOSFETs · MPN XR30N10B

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Specifications

Gate Charge(Qg)20nC@80V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)90pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation42W
RDS(on)37mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)74pF
Number1 N-channel
Input Capacitance(Ciss)1.964nF
TypeN-Channel

Technical details

N-Channel 100V 30A 42W Surface Mount TO-252-3L

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