XNRUSEMI XR30N10

XNRUSEMI · FETs & Power MOSFETs · MPN XR30N10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)40.6nC@50V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation43.7W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.42nF

Technical details

N-Channel 100V 30A 43.7W Surface Mount TO-252-3L

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