XNRUSEMI XR30N02S

XNRUSEMI · FETs & Power MOSFETs · MPN XR30N02S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)70nC@4.5V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation69W
RDS(on)2.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)416pF
Number1 N-channel
Input Capacitance(Ciss)5.67nF
TypeN-Channel

Technical details

20V 30A 1V 69W 2.2mΩ@4.5V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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