XNRUSEMI XR30G30F

XNRUSEMI · FETs & Power MOSFETs · MPN XR30G30F

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)24nC@10V
Output Capacitance(Coss)151pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation21.3W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)13mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.24nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 30A 21.3W Surface Mount PDFN5060-8L

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