XNRUSEMI XR30G20D

XNRUSEMI · FETs & Power MOSFETs · MPN XR30G20D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5nC@20V;9.8nC@20V
Current - Continuous Drain(Id)16A;14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation10.8W
Reverse Transfer Capacitance (Crss@Vds)51pF;115pF
RDS(on)14mΩ@10V;25mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)416pF;930pF

Technical details

N-Channel+P-Channel Array 30V 16A 14A 10.8W 10.8W Surface Mount PDFN3333-8L

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