XNRUSEMI XR2N20L

XNRUSEMI · FETs & Power MOSFETs · MPN XR2N20L

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)12nC@100V
Output Capacitance(Coss)24pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)495pF
TypeN-Channel

Technical details

200V 2A 2.1V 2.5W 480mΩ@10V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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