XNRUSEMI XR2N13

XNRUSEMI · FETs & Power MOSFETs · MPN XR2N13

4.0/5 from 1 engineer review.

Specifications

Drain to Source Voltage130V
Gate Charge(Qg)2.66nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.5W
RDS(on)165mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

130V 2A 2V 1.5W 165mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

Reviews

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