XNRUSEMI XR2301V

XNRUSEMI · FETs & Power MOSFETs · MPN XR2301V

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.2nC@4.5V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
RDS(on)125mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 P-Channel
Input Capacitance(Ciss)185pF
TypeP-Channel

Technical details

20V 2.3A 1V 800mW 125mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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