XNRUSEMI XR20P10D

XNRUSEMI · FETs & Power MOSFETs · MPN XR20P10D

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation102W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)68pF
Number1 P-Channel
Input Capacitance(Ciss)2.859nF
TypeP-Channel

Technical details

100V 20A 2V 102W 60mΩ@10V 1 P-Channel P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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