XNRUSEMI XR20P03D

XNRUSEMI · FETs & Power MOSFETs · MPN XR20P03D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@15V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation89.3W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)109pF
Number1 P-Channel
Input Capacitance(Ciss)982pF
TypeP-Channel

Technical details

30V 20A 1.6V 89.3W 10mΩ@10V 1 P-Channel P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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