XNRUSEMI XR20N10

XNRUSEMI · FETs & Power MOSFETs · MPN XR20N10

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Specifications

Gate Charge(Qg)20.6nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.7W
RDS(on)90mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)1.22nF
TypeN-Channel

Technical details

N-Channel 100V 20A 41.7W Surface Mount TO-252-3L

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