XNRUSEMI XR20G04

XNRUSEMI · FETs & Power MOSFETs · MPN XR20G04

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Specifications

Gate Charge(Qg)5.6nC@10V;4.1nC@10V
ConfigurationHalf-Bridge
Drain to Source Voltage20V
Output Capacitance(Coss)69.3pF;67pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)58.5pF;58pF
RDS(on)100mΩ@2.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)358pF;503pF

Technical details

N-Channel+P-Channel Array 20V 5A 2.5W Surface Mount SOT-23-6L

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