XNRUSEMI XR2012S

XNRUSEMI · FETs & Power MOSFETs · MPN XR2012S

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)164pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

N-Channel 20V 12A 3W Surface Mount SOP-8

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