XNRUSEMI XR1P10

XNRUSEMI · FETs & Power MOSFETs · MPN XR1P10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)4.5nC@15V
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1W
RDS(on)520mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 P-Channel
Input Capacitance(Ciss)553pF

Technical details

P-Channel 100V 0.9A 1W Surface Mount SOT-23

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