XNRUSEMI XR190N04G

XNRUSEMI · FETs & Power MOSFETs · MPN XR190N04G

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)80nC@20V
Current - Continuous Drain(Id)190A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation61W
RDS(on)2.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)317pF
Number1 N-channel
Input Capacitance(Ciss)4.9nF

Technical details

N-Channel 40V 190A 61W Surface Mount TO-263

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