XNRUSEMI XR15N10S

XNRUSEMI · FETs & Power MOSFETs · MPN XR15N10S

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF
TypeN-Channel

Technical details

100V 15A 1.5V 30W 80mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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