XNRUSEMI XR150N04T

XNRUSEMI · FETs & Power MOSFETs · MPN XR150N04T

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)112nC@20V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation115W
RDS(on)2.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)276pF
Number1 N-channel
Input Capacitance(Ciss)6.46nF

Technical details

N-Channel 40V 150A 115W Through Hole TO-220AB

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