XNRUSEMI XR12G02S

XNRUSEMI · FETs & Power MOSFETs · MPN XR12G02S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15nC@15V;16nC@4.5V
Output Capacitance(Coss)132pF;213pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV;800mV
Pd - Power Dissipation2W;2.6W
RDS(on)9mΩ@4.5V;13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)114pF;180pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)700pF;1.797nF
TypeN-Channel + P-Channel

Technical details

20V 12A 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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