XNRUSEMI XR120N04FT

XNRUSEMI · FETs & Power MOSFETs · MPN XR120N04FT

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)401pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)348pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.13nF
TypeN-Channel

Technical details

N-Channel 40V 120A 115W Through Hole TO-220F

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