XNRUSEMI XR10V03S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10V03S

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)11.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.2W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)99pF
Number2 N-Channel
Input Capacitance(Ciss)633pF
TypeN-Channel

Technical details

N-Channel Array 30V 11.5A 3.2W Surface Mount SOP-8

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