XNRUSEMI XR10P10K

XNRUSEMI · FETs & Power MOSFETs · MPN XR10P10K

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Specifications

Gate Charge(Qg)29nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.4W
RDS(on)194mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)28pF
Number1 P-Channel
Input Capacitance(Ciss)1.29nF
TypeP-Channel

Technical details

100V 10A 2V 2.4W 194mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS

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