XNRUSEMI XR10P10

XNRUSEMI · FETs & Power MOSFETs · MPN XR10P10

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.85V
Pd - Power Dissipation1.8W
RDS(on)177mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)28pF
Number1 P-Channel
Input Capacitance(Ciss)1.29nF
TypeP-Channel

Technical details

P-Channel 100V 10A 1.8W Surface Mount TO-252-3L

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