XNRUSEMI XR10P06Q

XNRUSEMI · FETs & Power MOSFETs · MPN XR10P06Q

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.8nC@48V
Output Capacitance(Coss)73pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation6.1W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)66mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.08nF
TypeP-Channel

Technical details

60V 8A 1.5V 6.1W 66mΩ@10V 1 P-Channel P-Channel SOT-89-3L Single FETs, MOSFETs RoHS

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