XNRUSEMI XR10P06

XNRUSEMI · FETs & Power MOSFETs · MPN XR10P06

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Specifications

Gate Charge(Qg)5.85nC@20V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation25W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 P-Channel
Input Capacitance(Ciss)715pF

Technical details

P-Channel 60V 10A 25W Surface Mount TO-252-3L

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