XNRUSEMI XR10P04S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10P04S

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Specifications

Gate Charge(Qg)11.5nC@15V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)134pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation25W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)102pF
Number1 P-Channel
Input Capacitance(Ciss)1.415nF
TypeN-Channel

Technical details

40V 10A 1.6V 25W 25mΩ@10V 1 P-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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