XNRUSEMI · FETs & Power MOSFETs · MPN XR10N10
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| Gate Charge(Qg) | 26.2nC@80V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 34.7W |
| RDS(on) | 150mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.023nF |
| Type | N-Channel |
N-Channel 100V 10A 34.7W Surface Mount TO-252-3L