XNRUSEMI XR10N06S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10N06S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)14nC@30V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)34.5mΩ@V
Number1 N-channel
Input Capacitance(Ciss)825pF
TypeN-Channel

Technical details

N-Channel 60V 10A 4W Surface Mount SOP-8

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