XNRUSEMI XR10N06

XNRUSEMI · FETs & Power MOSFETs · MPN XR10N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.2W
RDS(on)82mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)22pF
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

N-Channel 60V 10A 1.2W Surface Mount TO-252-3L

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