XNRUSEMI XR10N04S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10N04S

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Specifications

Gate Charge(Qg)22.9nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)96pF
Number1 N-channel
Input Capacitance(Ciss)964pF
TypeN-Channel

Technical details

N-Channel 40V 10A 20W Surface Mount SOP-8

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