XNRUSEMI XR10G10S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10G10S

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Specifications

Gate Charge(Qg)20.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)53pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)90mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.22nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 10A 2.5W Surface Mount SOP-8

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