XNRUSEMI · FETs & Power MOSFETs · MPN XR10G06S
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 14nC@30V;21nC@30V |
| Output Capacitance(Coss) | 49pF;65pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;1.7V |
| Pd - Power Dissipation | 2.3W;4W |
| RDS(on) | 32mΩ@10V;51mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF;52pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 825pF;1.17nF |
| Type | N-Channel + P-Channel |
60V 10A 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS