XNRUSEMI XR10G03S

XNRUSEMI · FETs & Power MOSFETs · MPN XR10G03S

No reviews yet — be the first to review XNRUSEMI XR10G03S.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)34nC@15V;42nC@15V
Output Capacitance(Coss)245pF;125pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.6V
Pd - Power Dissipation5W;3.5W
RDS(on)9mΩ@10V;19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)215pF;109pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.6nF;900pF
TypeN-Channel + P-Channel

Technical details

30V 10A 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs