XNRUSEMI XR100P04F

XNRUSEMI · FETs & Power MOSFETs · MPN XR100P04F

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Specifications

Gate Charge(Qg)195nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)697pF
RDS(on)3.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.733nF

Technical details

P-Channel 40V 100A 200W Surface Mount PDFN5060-8L

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