XNRUSEMI XR100P04

XNRUSEMI · FETs & Power MOSFETs · MPN XR100P04

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Specifications

Gate Charge(Qg)118nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation58W
RDS(on)4.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)345pF
Number1 P-Channel
Input Capacitance(Ciss)6.638nF

Technical details

P-Channel 40V 100A 58W Surface Mount TO-252-3L

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