XNRUSEMI XR100P03

XNRUSEMI · FETs & Power MOSFETs · MPN XR100P03

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Specifications

Gate Charge(Qg)146nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation60W
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)580pF
Number1 P-Channel
Input Capacitance(Ciss)5.07nF

Technical details

P-Channel 30V 100A 60W Surface Mount TO-252-3L

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