XNRUSEMI XR100N20T

XNRUSEMI · FETs & Power MOSFETs · MPN XR100N20T

No reviews yet — be the first to review XNRUSEMI XR100N20T.

Specifications

Gate Charge(Qg)134nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)532pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)148pF
RDS(on)25.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.826nF
TypeN-Channel

Technical details

N-Channel 200V 100A 272W Through Hole TO-220AB

Related FETs & Power MOSFETs