XNRUSEMI XR100N20H

XNRUSEMI · FETs & Power MOSFETs · MPN XR100N20H

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Specifications

Gate Charge(Qg)134nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation272W
RDS(on)20mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

200V 100A 5V 272W 20mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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