XNRUSEMI XR100N20G

XNRUSEMI · FETs & Power MOSFETs · MPN XR100N20G

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Specifications

Gate Charge(Qg)134nC@50V
Drain to Source Voltage200V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)532pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)148pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.826nF
TypeN-Channel

Technical details

N-Channel 200V 100A 272W Surface Mount TO-263

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