XNRUSEMI XR1002C

XNRUSEMI · FETs & Power MOSFETs · MPN XR1002C

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Specifications

Gate Charge(Qg)5.3nC@30V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.3W
RDS(on)286mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)321pF
TypeN-Channel

Technical details

N-Channel 100V 2.2A 2.3W Surface Mount SOT-23

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