XNRUSEMI XR1002B

XNRUSEMI · FETs & Power MOSFETs · MPN XR1002B

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Specifications

Gate Charge(Qg)5.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
RDS(on)280mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)440pF
TypeN-Channel

Technical details

N-Channel 100V 2.3A 1W Surface Mount SOT-23

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