XDS TX15N10B

XDS · FETs & Power MOSFETs · MPN TX15N10B

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)890pF
TypeN-Channel

Technical details

N-Channel 100V 15A 34.7W Surface Mount TO-252

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