XCH LG50N10AP

XCH · FETs & Power MOSFETs · MPN LG50N10AP

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Specifications

Output Capacitance(Coss)320pF
Pd - Power Dissipation105W
ConfigurationStandalone
Gate Charge(Qg)28.5nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)14.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.98nF

Technical details

105W 100V 50A 2.5V 14.5Ω@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS

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