XCH · FETs & Power MOSFETs · MPN GSW25N65EF
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.65nF |
N-Channel 650V 25A 210W Through Hole TO-247