XCH GSD07N65E

XCH · FETs & Power MOSFETs · MPN GSD07N65E

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Specifications

Gate Charge(Qg)10.3nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation35W
RDS(on)700mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6.4pF
Number1 N-channel
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

N-Channel 650V 7A 35W Surface Mount TO-252

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